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A self-biased neutron detector based on an SiC semiconductor for a harsh environment
Jang Ho Ha1, Sang Mook Kang, Se Hwan Park
1Korea Atomic Energy Research Institute, Daejeon 305-353, Republic of Korea. jhha@kaeri.re.kr
Summary
This study developed a radiation-hard silicon carbide (SiC) neutron detector for nuclear applications. The detector operates efficiently at zero-biased voltage, demonstrating high charge collection efficiency for field measurements.
Area of Science:
- Nuclear Engineering
- Materials Science
- Semiconductor Physics
Background:
- Radiation-hard semiconductor materials like SiC, diamond, and AlN are crucial for neutron detection in demanding environments.
- Applications include in-core reactor monitoring, spent fuel characterization, and homeland security.
- Field measurements require detectors with low power consumption, mechanical stability, and radiation hardness.
Purpose of the Study:
- To develop a radiation-resistive neutron semiconductor detector using wide band-gap silicon carbide (SiC).
- To achieve efficient operation at zero-biased voltage by leveraging a strong internal electric field.
Main Methods:
- Fabrication of a neutron semiconductor detector utilizing SiC material.
- Characterization of detector performance under varying biased voltage conditions.
Main Results:
- The SiC neutron detector demonstrated over 80% charge collection efficiency (CCE) at zero-biased voltage.
- Achieved 100% CCE when a biased voltage exceeding 20V was applied.
Conclusions:
- The developed SiC neutron detector is a promising device for nuclear applications requiring radiation hardness and low-power operation.
- The detector's ability to operate efficiently at zero-biased voltage simplifies field deployment and enhances usability.
