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Updated: Jun 24, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Nanopipes in gallium nitride nanowires and rods
Benjamin W Jacobs1, Martin A Crimp, Kaylee McElroy
1Department of Electrical and Computer Engineering, Michigan State University, East Lansing 48824, USA. jacobsbe@egr.msu.edu
Abstract:
Gallium nitride nanowires and rods synthesized by a catalyst-free vapor-solid growth method were analyzed with cross section high-resolution transmission electron microscopy. The cross section studies revealed hollow core screw dislocations, or nanopipes, in the nanowires and rods. The hollow cores were located at or near the center of the nanowires and rods, along the axis of a screw dislocation. The formation of the hollow cores is consistent with effect of screw dislocations with giant Burgers vector predicted by Frank.

