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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Continuous-wave Raman amplification in silicon waveguides: beyond the undepleted pump approximation.

Ivan D Rukhlenko¹, Malin Premaratne, Chethiya Dissanayake

¹Monash University, Clayton, Victoria 3800, Australia. ivan.rukhlenko@eng.monash.edu.au

|April 18, 2009

Summary

We developed new equations for optical wave interactions in silicon waveguides, improving accuracy for Raman gain by avoiding the undepleted-pump approximation. This enhances understanding of nonlinear absorption effects on amplification.

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Area of Science:

Nonlinear optics
Materials science
Photonics

Background:

Silicon waveguides are crucial for integrated photonics.
Understanding nonlinear optical effects like Raman scattering and free-carrier absorption is vital for device performance.
Existing models often rely on approximations that limit accuracy.

Purpose of the Study:

To develop accurate analytical expressions for nonlinear optical wave interactions in silicon waveguides.
To investigate the impact of linear losses, stimulated Raman scattering, and free-carrier absorption.
To improve the understanding of Raman gain processes by moving beyond the undepleted-pump approximation.

Main Methods:

Derivation of approximate analytical expressions for nonlinear wave interaction.
Analysis of copropagating optical waves in silicon waveguides.
Incorporation of linear losses, stimulated Raman scattering, and free-carrier absorption.
Avoidance of the undepleted-pump approximation.

Main Results:

New analytical expressions accurately describe nonlinear interactions.
The undepleted-pump approximation is shown to be inadequate for Raman gain.
A generalized definition of effective length is proposed.
The new definition offers better insight into nonlinear absorption's impact on Raman amplification.

Conclusions:

The presented analytical expressions provide a more accurate description of nonlinear phenomena in silicon waveguides.
The proposed generalized effective length enhances the understanding of nonlinear absorption effects on Raman amplification.
This work offers improved tools for designing and optimizing silicon-based photonic devices.