Related Experiment Video
Updated: Jun 23, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Focused electron-beam-induced deposition of 3 nm dots in a scanning electron microscope
Leon van Kouwen1, Aurelien Botman, Cornelis W Hagen
1Delft University of Technology, Faculty of Applied Sciences, Lorentzweg 1, 2628 CJ, Delft, The Netherlands.
Abstract:
Electron-beam-induced deposition allows the creation of three-dimensional nanodevices within a scanning electron microscope. Typically the dimensions of the fabricated structure are from 20 nm to several micrometers. Until now the record for the smallest deposited feature in an SEM was 3.5 nm, measured by an indirect method. We have achieved a nanodot having a full width half-maximum of 2.8 +/- 0.3 nm, measured directly in the same microscope after deposition.
Related Concept Videos
Scanning Electron Microscopy
Fundamental Principles
Accelerated...
Preparation of Samples for Electron Microscopy
Overview of Electron Microscopy
Transmission Electron Microscopy

