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Updated: Jun 23, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

High-temperature HgTe/CdTe multiple-quantum-well lasers.

I Vurgaftman, J Meyer

|April 21, 2009

Summary

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Engineered thin HgTe quantum wells enable mid-infrared lasers. These mercury-cadmium-telluride (HgCdTe) devices suppress key loss mechanisms, paving the way for higher operating temperatures.

Area of Science:

Materials Science
Quantum Optics
Semiconductor Physics

Background:

Previous Hg-based mid-infrared (mid-IR) lasers primarily utilized bulk Hg(1-x)Cd(x)Te alloys or thick Hg(1-x)Cd(x)Te quantum wells.
These conventional approaches often face limitations due to Auger recombination and intervalence free carrier absorption, hindering performance at higher temperatures.

Purpose of the Study:

To investigate the potential of ultrathin HgTe binary quantum wells for mid-IR laser applications.
To engineer HgTe quantum wells to mitigate Auger recombination and intervalence free carrier absorption.
To predict the lasing performance of these engineered quantum wells.

Main Methods:

Detailed numerical simulations were employed to analyze the behavior of ultrathin HgTe binary quantum wells.

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The simulations focused on suppressing Auger recombination and intervalence free carrier absorption.

Main Results:

The study predicts continuous-wave (cw) emission at 4.3 µm for optically pumped devices up to 220 K and for diode operation up to 105 K.
Pulsed mode operation is expected to achieve maximum lasing temperatures over 100 K higher than previous Hg-based mid-IR results.

Conclusions:

Ultrathin HgTe binary quantum wells offer a promising pathway for high-temperature mid-IR laser development.
Engineering these wells effectively suppresses detrimental loss mechanisms, significantly enhancing potential laser performance.