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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Effect of a single dislocation in a heterostructure layer on the local polarization of a ferroelectric layer

C L Jia1, S B Mi, K Urban

  • 1Institute of Solid State Research and Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, D-52425 Jülich, Germany. c.jia@fz-juelich.de

Physical Review Letters
|April 28, 2009
PubMed

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