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Updated: Jun 23, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Randomized benchmarking and process tomography for gate errors in a solid-state qubit
J M Chow1, J M Gambetta, L Tornberg
1Department of Physics, Yale University, New Haven, Connecticut 06520, USA.
Abstract:
We present measurements of single-qubit gate errors for a superconducting qubit. Results from quantum process tomography and randomized benchmarking are compared with gate errors obtained from a double pi pulse experiment. Randomized benchmarking reveals a minimum average gate error of 1.1+/-0.3% and a simple exponential dependence of fidelity on the number of gates. It shows that the limits on gate fidelity are primarily imposed by qubit decoherence, in agreement with theory.
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