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Updated: Jun 23, 2026

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
Itinerant ferromagnetism in the electronic localization limit
N Kurzweil1, E Kogan, A Frydman
1The Department of Physics, Bar Ilan University, Ramat Gan 52900, Israel.
Abstract:
We present Hall effect, Rxy(H), and magnetoresistance, Rxx(H), measurements of ultrathin films of Ni, Co, and Fe with thicknesses varying between 0.2 and 8 nm and resistances between 1 MOmega and 100 Omega. Both measurements show that films having a resistance above a critical value RC, (thickness below a critical value, dC) show no signs of ferromagnetism. Ferromagnetism appears only for films with R
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