Nonvolatile Ferroelectric Control of Diffusive Spin Transport at Room Temperature in Graphene/CuInP₂S₆...

Nonvolatile electric control of spin transport is important for low-power spintronic applications, but remains challenging to realize. While prior work has highlighted the significance of ferroelectric control in spintronics-primarily through magnetoelectric switching, spin-charge conversion, or spin-dependent tunnelling-direct nonvolatile control of the diffusive spin current itself at room temperature has not been demonstrated. Here, we demonstrate a graphene lateral spin valve incorporating a van der Waals ferroelectric top gate, CuInP₂S₆, that enables bistable, nonvolatile modulation of diffusive spin transport at 300 K. At an identical applied gate bias, opposite ferroelectric polarization states produce distinct spin signals, demonstrating retained-state control beyond ordinary electrostatic gating, and yielding a maximum modulation exceeding 100% under optimized operating conditions. Hanle spin-precession measurements further reveal distinct effective spin-transport states for the two remanent ferroelectric states, consistent with nonvolatile ferroelectric modulation of spin transport. These results highlight a promising route toward room-temperature, nonvolatile electrical control of spin transport by using van der Waals heterostructures.