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Updated: Jun 23, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Transport properties of T-shaped and crossed junctions based on graphene nanoribbons
Fangping OuYang1, Jin Xiao, Rui Guo
1School of Physics Science and Technology, Central South University, Changsha 410083, People's Republic of China. oyfp04@mails.tsinghua.edu.cn
Abstract:
T-shaped and crossed junctions based on graphene nanoribbons (GNRs) were designed and studied in this paper. These junctions were made of shoulders (ZGNRs) joined with stems (AGNRs). We demonstrated the intrinsic transport properties and effective boron (or nitrogen) doping of the junctions by using first-principles quantum transport simulation. Several interesting results were found. (i) The I-V characteristics of the pure-carbon T-shaped junctions were shown to have metallic behavior, and the current of the junction strongly depends on the height of the stem. (ii) The conductances of the devices are found to depend sensitively on their geometric structures and be controlled by selective doping. This feature could make such a quasi-2D carbon-based junction a possible candidate for nanoelectronic devices.
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