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Updated: Jun 23, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Global faceting behavior of strained Ge islands on Si

Jeremy T Robinson1, Armando Rastelli, Oliver Schmidt

  • 1US Naval Research Laboratory, Washington, DC 20375, USA.

Nanotechnology
|May 7, 2009
PubMed

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