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Published on: November 15, 2013
The effect of GaAs(100) surface preparation on the growth of nanowires
S C Ghosh1, P Kruse, R R LaPierre
1Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, Canada.
Abstract:
The influence of GaAs(100) substrate surface preparation on Au-catalysed GaAs nanowires was studied. Elongated pits of varying dimensions and orientation were formed on GaAs(100) substrates depending on the interaction with Au and surface oxides. The resulting surface topography is shown to influence the density and orientation of nanowires. [111] B-oriented nanowires nucleated from Au particles lying on the sidewall facets of the pits, while [011]-oriented nanowires nucleated from Au particles lying outside the pits.
