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Updated: Jun 23, 2026

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees
Published on: November 29, 2016
Electrical properties of individual ZnO nanowires
M Sakurai1, Y G Wang, T Uemura
1International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba 305-0044, Japan. SAKURAI.Makoto@nims.go.jp
Abstract:
The electrical properties of individual ZnO nanowires were investigated for two methods of fabricating nanowire-electrode junctions. The number of carriers in the nanowires was increased by electrostatically doping them by applying a gate voltage. The nanowires were chemically doped by introducing impurities during growth. The Ga-doped nanowires had a linear current-voltage relationship over a wide voltage region. The nanowire-electrode junctions were formed either by using lithography to form electrodes on the nanowire or by using an AFM probe to move a nanowire onto prepared electrodes. With both methods, electrodes made of Ga-doped ZnO were found to make better electrical contact with the nanowire than those made of Ti/Au.
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