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Updated: Jun 23, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Electrical bistabilities and operating mechanisms of memory devices fabricated utilizing ZnO quantum dot-multi-walled
Fushan Li1, Dong Ick Son, Sung Hwan Cho
1National Research Laboratory for Nano Quantum Electronics, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea.
Abstract:
Transmission electron microscopy images showed that the ZnO quantum dots (QDs) were conjugated with multi-walled carbon nanotubes (MWCNTs). Bistable memories utilizing an ensemble of the ZnO QD-MWCNT heterostructures were developed and the storage capability of the devices was significantly enhanced due to the conjugation of the ZnO QDs and the MWCNTs. Operating mechanisms of memory devices fabricated utilizing the ZnO QD-MWCNT heterostructures are described on the basis of the current-voltage results. The memory devices exhibited excellent environmental stability at ambient conditions.
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