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Enhanced modulation bandwidth of nanocavity light emitting devices
Erwin K Lau1, Amit Lakhani, Rodney S Tucker
1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA. elau@eecs.berkeley.edu
Optics Express
|May 13, 2009
Summary
Nano-cavity light-emitting devices (nLEDs) can achieve modulation bandwidths far exceeding lasers. This enhancement, driven by the Purcell effect below lasing threshold, requires sub-wavelength cavities for speeds beyond conventional lasers.
Area of Science:
- Optoelectronics
- Nanophotonics
- Semiconductor Devices
Background:
- Conventional lasers have limitations in direct modulation bandwidth.
- Nano-cavity light-emitting devices (nLEDs) offer potential for high-speed optical modulation.
Purpose of the Study:
- To investigate the direct modulation bandwidth of nLEDs.
- To determine factors influencing and enhancing nLED modulation speeds.
- To compare nLED bandwidth capabilities with conventional lasers.
Main Methods:
- Detailed theoretical analysis of nLEDs.
- Investigation of the Purcell effect's influence on modulation bandwidth.
- Analysis of the relationship between modal volume and bandwidth.
Main Results:
- nLEDs demonstrate modulation bandwidths significantly exceeding those of lasers.
- The Purcell effect enhances bandwidth when devices are biased below the lasing threshold.
- Maximum bandwidth scales inversely with the square root of modal volume.
Conclusions:
- Sub-wavelength cavities are crucial for nLEDs to surpass conventional laser speeds.
- nLEDs represent a promising technology for high-speed optical communication and signal processing.
- Device design, specifically modal volume and bias point, critically impacts modulation performance.
