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Updated: Jun 23, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides

Byoungjun Park1, Kyoungah Cho, Junggwon Yun

  • 1Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea.

Journal of Nanoscience and Nanotechnology
|May 14, 2009
PubMed

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