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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Order and creep in flux lattices and charge density wave pinned by planar defects

Aleksandra Petković1, Thomas Nattermann

  • 1Institutfiir Theoretische Physik, Universität zu Köln, Zülpicher Strasse 77, 50937 Köln, Germany.

Physical Review Letters
|May 14, 2009
PubMed

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