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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Approaching the dirac point in high-mobility multilayer epitaxial graphene

M Orlita1, C Faugeras, P Plochocka

  • 1Grenoble High Magnetic Field Laboratory, CNRS, BP 166, F-38042 Grenoble Cedex 09, France. orlita@karlov.mff.cuni.cz

Physical Review Letters
|May 14, 2009
PubMed

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