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Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Template electrodeposition of ordered bismuth telluride nanowire arrays
Shanghua Li1, Yibin Liang, Jian Qin
1Department of Microelectronics and Applied Physics, Royal Institute of Technology, SE-16 440 Stockholm, Sweden.
Abstract:
Thermoelectric bismuth telluride nanowire arrays have been synthesized by direct-current electrode-position into porous anodic alumina membranes both galvanostatically and potentiostatically. The as-synthesized Bi2Te3 nanowire arrays are highly ordered in large area, stoichiometric, uniform, with high aspect ratio (above 100) and high filling ratio (>90%) of the membrane. The effects of different electrochemical deposition parameters on crystal structures, morphology and composition have been investigated. Field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) have been used to characterize the physical and chemical properties of the nanowires.

