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Monte Carlo simulation of dopant contrast in scanning electron microscope image
1Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
Abstract:
In this work, the dopant contrast in SEM image between the p-type and n-type areas in the semiconductor device is studied by using a Monte Carlo simulation method. The work function induced by the surface state is considered to be responsible for the dopant contrast. A layer-by-layer structure, i.e., three p-type layers with different concentrations and one n-type layer, each of them is separated by a undoped intrinsic Si layer, has been simulated to compare with the experimental observation. The simulated image shows clearly a dopant contrast between the layers and the undopted Si substrate.
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