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Analysis of Raman lasing characteristics in silicon-on-insulator waveguides
Optics Express
|June 3, 2009
Summary
Continuous-wave Raman lasing is achievable in silicon-on-insulator waveguides. This study analyzes free carrier lifetime
Area of Science:
- Optics and Photonics
- Semiconductor Physics
- Materials Science
Background:
- Continuous-wave Raman lasing is a key technology for optical signal processing.
- Silicon-on-insulator (SOI) waveguides offer a promising platform for integrated photonics.
- Two-photon absorption (TPA) and free-carrier absorption (FCA) are known detrimental effects in silicon photonics.
Purpose of the Study:
- To investigate the feasibility of continuous-wave Raman lasing in SOI waveguides.
- To analyze the impact of TPA and FCA on Raman laser characteristics.
- To determine the dependence of lasing properties on free carrier lifetime.
Main Methods:
- Numerical analysis of Raman lasing dynamics in SOI.
- Modeling of TPA and FCA effects on carrier generation and absorption.
- Simulation of pump-power-dependent cavity losses and output power.
Main Results:
- Continuous-wave Raman lasing is predicted to be possible in SOI waveguides.
- The effective free carrier lifetime significantly influences lasing characteristics.
- Pump-power-dependent cavity losses result in output power rollover and an upper shutdown threshold.
Conclusions:
- SOI waveguides can support continuous-wave Raman lasing despite TPA and FCA.
- Understanding and controlling free carrier dynamics is crucial for optimizing SOI Raman laser performance.
- The identified rollover and shutdown phenomena provide insights into device operational limits.
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