Analysis of Raman lasing characteristics in silicon-on-insulator waveguides
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Updated: Jun 22, 2026
Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Abstract:
Numerical analysis predicts that continuous-wave Raman lasing is possible in silicon-on-insulator (SOI) waveguides, in spite of the detrimental presence of two-photon absorption and free-carrier absorption. We discuss in particular the dependence of the lasing characteristics of SOI Raman lasers on the effective lifetime of the free carriers generated by two-photon absorption. It is shown that the pump-power-dependent cavity losses lead to a rollover of the output-power characteristics at a certain pump-power level and that there exists an upper shutdown threshold at which the laser operation breaks down.
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