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Rejection of Fluorescence Background in Resonance and Spontaneous Raman Microspectroscopy
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Sub-picosecond all-optical gate utilizing aN intersubband transition.

Norio Iizuka, Kei Kaneko, Nobuo Suzuki

    Optics Express
    |June 5, 2009
    PubMed
    Summary

    Researchers developed an all-optical gate-switch using Gallium Nitride (GaN) intersubband transitions. This advancement significantly reduced propagation loss and improved performance for faster optical switching.

    Area of Science:

    • Optoelectronics
    • Materials Science
    • Gallium Nitride (GaN) based devices

    Background:

    • All-optical gate-switches are crucial for high-speed optical communication.
    • Gallium Nitride (GaN) intersubband transitions offer potential for ultrafast all-optical switching.
    • Edge dislocation density in epitaxial layers can impede device performance.

    Purpose of the Study:

    • To achieve all-optical gate-switch operation utilizing GaN intersubband transitions.
    • To reduce edge dislocation density in GaN epitaxial layers.
    • To improve the performance of all-optical gate-switches in terms of propagation loss and extinction ratio.

    Main Methods:

    • Employing Molecular Beam Epitaxy (MBE) regrowth on Metalorganic Chemical Vapor Deposition (MOCVD)-grown layers to reduce dislocation density.

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  • Investigating the impact of reduced dislocation density on propagation loss for transverse magnetic polarization.
  • Characterizing the all-optical gate-switch performance, including switching time and extinction ratio.

    • Main Results:

    • Successfully reduced edge dislocation density in GaN epitaxial layers.
    • Significantly decreased excess propagation loss for transverse magnetic polarization.
    • Achieved a sub-picosecond all-optical gate with an extinction ratio exceeding 10 dB at 150 pJ input pulse energy.
    • Improved insertion loss when the switch is in the 'on' state.

    Conclusions:

    • Reducing edge dislocation density in GaN epitaxial layers is effective for enhancing all-optical gate-switch performance.
    • The developed GaN-based all-optical gate-switch demonstrates ultrafast operation and improved efficiency.
    • This work paves the way for advanced optoelectronic devices and high-speed optical signal processing.