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Updated: Jun 22, 2026
07:51
Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Dielectric screening enhanced performance in graphene FET.
Fang Chen1, Jilin Xia, David K Ferry
1Center for Bioelectronics and Biosensors, Biodesign Institute, Arizona State University, Tempe, Arizona 85287, USA.
Nano Letters
|June 6, 2009
Summary
We investigated graphene transistors in various solvents, finding that higher dielectric constants significantly boost carrier mobility. This suggests graphene
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene exhibits unique electronic properties, making it a promising material for next-generation electronics.
- Understanding factors influencing graphene's carrier mobility is crucial for device optimization.
Purpose of the Study:
- To investigate the impact of solvent dielectric constant on graphene transistor transport properties.
- To determine the relationship between dielectric environment and carrier mobility in graphene.
Main Methods:
- Fabrication and characterization of graphene transistors.
- Measurement of device performance in solvents with varying dielectric constants (over two orders of magnitude).
Main Results:
- Carrier mobility in graphene transistors increased by up to three orders of magnitude with increasing dielectric constant.
- A peak mobility of approximately 7 x 10^4 cm²/V·s was observed at a dielectric constant of ~47.
- Mobility plateaued at higher dielectric constants, indicating proximity to the intrinsic room-temperature limit for SiO(2) substrates.
Conclusions:
- The dielectric environment significantly influences graphene's carrier mobility.
- Long-range Coulomb scattering from charged impurities beneath the graphene layer is the dominant factor limiting mobility.
- Results provide insights into achieving intrinsic room-temperature mobility in graphene devices.
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