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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: Jun 22, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

A high efficiency input/output coupler for small silicon photonic devices.

Goran Masanovic, Graham Reed, William Headley

    Optics Express
    |June 6, 2009
    PubMed
    Summary

    Efficiently coupling optical fiber light into semiconductor waveguides is challenging due to refractive index mismatches. This study demonstrates a novel Dual-Grating Assisted Directional Coupler, achieving 55% coupling efficiency.

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    Last Updated: Jun 22, 2026

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    Fabrication and Testing of Photonic Thermometers
    08:44

    Fabrication and Testing of Photonic Thermometers

    Published on: October 24, 2018

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    Area of Science:

    • Optoelectronics
    • Semiconductor devices
    • Photonics

    Background:

    • Coupling light from optical fibers to semiconductor waveguides presents significant challenges due to large refractive index differences.
    • Existing methods lack the efficiency and robustness required for commercial applications in optoelectronics.

    Purpose of the Study:

    • To present experimental results of a novel Dual-Grating Assisted Directional Coupler for efficient optical coupling.
    • To demonstrate a viable solution for the problematic light coupling in semiconductor optical waveguides.

    Main Methods:

    • Development and experimental testing of a Dual-Grating Assisted Directional Coupler.
    • Characterization of the coupling efficiency between an optical fiber and a semiconductor waveguide.

    Main Results:

    • Successful demonstration of the novel coupling principle.
    • Achieved a measured coupling efficiency of 55%.

    Conclusions:

    • The Dual-Grating Assisted Directional Coupler shows promise for efficient and robust optical coupling in semiconductor devices.
    • This method offers a potential advancement for commercial applications in integrated photonics.