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Related Experiment Video

Updated: Jun 22, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Surface structure silicon based impact-ionization multiplier for optical detection.

Hong-Wei Lee, Joshua Beutler, Aaron Hawkins

    Optics Express
    |June 6, 2009
    PubMed
    Summary
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    This study introduces a novel solid-state current amplifier utilizing impact ionization. The silicon-based device achieves high current gains (>100) with low leakage currents (<10 nA).

    Area of Science:

    • Solid-state physics
    • Microelectronics engineering
    • Semiconductor device physics

    Background:

    • Traditional current amplifiers face limitations in gain and noise.
    • Impact ionization offers a potential mechanism for high-gain amplification in solid-state devices.

    Purpose of the Study:

    • To present an innovative solid-state current amplifier design.
    • To demonstrate the feasibility and performance of an impact ionization-based amplifier.
    • To validate the device's compatibility with various current sources.

    Main Methods:

    • Device fabrication using standard silicon microelectronics processes, including ion implantation.
    • Testing the amplifier's performance with silicon and indium-gallium-arsenide photodiodes.
    • Characterization of current gain and leakage current.

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    Last Updated: Jun 22, 2026

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
    08:48

    Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

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    Published on: August 17, 2017

    Main Results:

    • Achieved current gains exceeding 100.
    • Measured pre-amplified leakage currents below 10 nA.
    • Demonstrated successful integration with different photodiode types.

    Conclusions:

    • The developed solid-state current amplifier based on impact ionization is highly effective.
    • The device offers significant current gain with minimal leakage, suitable for sensitive applications.
    • Its compatibility with diverse current sources highlights its versatility.