Related Experiment Video
Updated: Jun 22, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
3.9-4.8 microm gain-switched lasing of Fe:ZnSe at room temperature
Abstract:
We report a room temperature Fe:ZnSe laser in gain-switched operation and tuning over the 3.9 - 4.8microm spectral range. Mid-IR emission of Fe2+:ZnSe was studied under three regimes of excitation: ordinary optical (2.92mum) excitation of 5T2 excited state of Fe2+; excitation via 5E level of Cr co-dopant (1.56mum); and excitation via photo-ionization transition of Fe2+ (0.532mum). The energy transfer from Cr2+ (5E level) to Fe2+ (5T2 level) under 1.56microm wavelength excitation was observed and resulted in simultaneous RT emission of Fe:Cr:ZnSe crystal over ultra-broadband spectral range of 2- 3 and 3.5-5mum. We also report the observation of mid-IR emission at 3.5- 5mum induced by 2+->3+->2+ ionization transitions of the iron ions in Fe:ZnSe.

