ZnO thin films implanted with Al, Sb and P: optical, structural and electrical characterization

Area of Science:

• Materials Science
• Solid State Physics
• Semiconductor Research

Background:

• Zinc oxide (ZnO) thin films are crucial for optoelectronic applications.
• Doping is a key method to tune ZnO properties.
• Understanding dopant effects is essential for material optimization.

Purpose of the Study:

• To explore the structural, optical, and electrical properties of P, Sb, and Al implanted ZnO thin films.
• To investigate the influence of different dopants and annealing temperatures on ZnO film characteristics.
• To determine optimal annealing conditions for enhanced ZnO film performance.

Main Methods:

• Radio-frequency (r.f.) magnetron sputtering for ZnO thin film deposition.
• Ion implantation with Phosphorus (P), Antimony (Sb), and Aluminum (Al).
• Annealing at 300°C and 500°C.
• Characterization using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), transmittance, and d.c. conductivity measurements.

Main Results:

• Annealed doped ZnO films retained a polycrystalline structure with a preferred (002) orientation.
• The films exhibited high transparency across the studied conditions.
• Electrical conductivity significantly increased after annealing at 500°C.
• Achieved conductivities: 10.90 (Ωcm)⁻¹ (P-doped), 10.33 (Ωcm)⁻¹ (Al-doped), and 0.56 (Ωcm)⁻¹ (Sb-doped).

Conclusions:

• Annealing at 500°C is effective in enhancing the electrical conductivity of P, Sb, and Al doped ZnO films.
• The (002) preferred orientation and transparency are maintained after annealing.
• P and Al doping show superior performance in conductivity enhancement compared to Sb doping.