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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Novel monolithic integration scheme for high-speed electroabsorption modulators and semiconductor optical amplifiers

Fang-Zheng Lin¹, Tsu-Hsiu Wu, Yi-Jen Chiu

¹Department of Photonics, Semiconductor Technology Research Development Center, Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.

|June 10, 2009

Summary

A new cascaded-integration (CI) scheme improves high-speed optical modulation by combining electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs). This design reduces electrical reflection and enhances modulation speed, offering a promising solution for optoelectronics.

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Quasi-light Storage for Optical Data Packets

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Published on: February 6, 2014

Area of Science:

Optoelectronics and Photonics
Materials Science and Engineering

Background:

High-speed optical modulation is crucial for modern communication systems.
Conventional integration schemes face challenges with electrical reflection and driving power at high frequencies.
Electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs) are key components in optical modulation.

Purpose of the Study:

To propose and demonstrate a novel monolithic integration scheme, cascaded-integration (CI), for enhanced high-speed optical modulation.
To investigate the performance benefits of CI compared to conventional single-section (SS) integration.
To analyze the impact of CI on electrical reflection, optical loss, and electro-optic (EO) response.

Main Methods:

Fabrication of two integration schemes: cascaded-integration (CI) and conventional single-section (SS).
Characterization of modulation depth, optical propagation loss, and electrical reflection across a frequency range.
Measurement and simulation of electrical-to-optical (EO) response and -3dB bandwidth.

Main Results:

The CI scheme integrates segmented EAMs and SOAs with high-impedance transmission lines (HITLs) for distributive re-amplification and re-modulation.
CI demonstrates significantly reduced electrical reflection (< -12dB up to 30GHz) compared to SS (< -5dB above 5GHz).
CI achieves a -3dB bandwidth exceeding 30GHz, substantially higher than the 13GHz for SS, with comparable DC modulation efficiency and minimal extra optical loss (< 1dB).

Conclusions:

The cascaded-integration (CI) scheme effectively improves high-speed electrical properties and EO response in optical modulators.
CI enables higher-speed modulation with high output optical power while reducing driving power requirements by mitigating impedance mismatch.
This monolithic integration approach holds potential for various high-speed optoelectronic device applications.