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Related Experiment Video

Updated: Jun 22, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
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22-nm immersion interference lithography.

T M Bloomstein, Michael F Marchant, Sandra Deneault

    Optics Express
    |June 12, 2009
    PubMed
    Summary
    This summary is machine-generated.

    Researchers achieved 22-nm half pitch gratings using immersion interference lithography with 157-nm light. High-index immersion fluids, despite absorption, are preferred for ultrahigh resolution patterning.

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    Area of Science:

    • Materials Science
    • Optical Engineering
    • Nanotechnology

    Background:

    • Achieving ultrahigh resolution in photolithography is critical for advanced semiconductor manufacturing.
    • Immersion lithography enhances resolution by using a fluid medium between the lens and wafer.
    • Developing advanced immersion fluids and processes is key to pushing resolution limits.

    Purpose of the Study:

    • To demonstrate ultrahigh resolution patterning using immersion interference lithography.
    • To investigate the impact of immersion fluid properties on resolution and process parameters.
    • To analyze the trade-offs between immersion fluid index, absorption, and process throughput.

    Main Methods:

    • Utilized immersion interference lithography with 157-nm light source.
    • Employed a sapphire coupling prism (refractive index 2.09).
    • Developed a 30-nm-thick immersion fluid layer (refractive index 1.82) via spin-casting.
    • Used a diluted 193-nm photoresist modified for 157-nm light (refractive index 1.74).

    Main Results:

    • Successfully patterned gratings with a 22-nm half pitch, demonstrating ultrahigh resolution.
    • Precisely controlled immersion fluid thickness using spin-casting technique.
    • Identified a preference for high-index, albeit absorbing, immersion fluids over low-index, transparent ones for optimal performance.

    Conclusions:

    • Immersion interference lithography with 157-nm light and optimized fluid properties enables sub-25-nm patterning.
    • Precise control over immersion fluid thickness is achievable through spin-casting.
    • Material selection of immersion fluids involves a critical trade-off between refractive index and absorption for maximizing resolution and throughput.