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Raman Spectroscopy Instrumentation: Overview

Raman Spectroscopy Instrumentation: Overview

A conventional Raman spectrophotometer includes a laser source, a sample holding system, a wavelength selector, and a detector.
The monochromatic laser source, typically using visible or near-infrared radiation, generates a highly focused beam of light. This light interacts with the molecules of the sample, scattering some of the light. Liquid and gaseous samples are usually tested in ordinary glass capillaries, while solids can be analyzed as powders packed in capillaries or as potassium...

Raman Spectroscopy: Overview

Raman Spectroscopy: Overview

The underlying principle of Raman spectroscopy is based on the interaction between light and matter, specifically molecules' inelastic scattering of photons. When a monochromatic beam of light, typically from a laser source, interacts with a sample, most scattered light has the same frequency as the incident light. This is known as Rayleigh scattering.
However, a small fraction of the scattered light exhibits a frequency shift due to the exchange of energy between the incident photons and the...

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Updated: Jun 22, 2026

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems

Published on: April 28, 2016

Monolithic integrated Raman silicon laser.

Haisheng Rong, Ying-Hao Kuo, Shengbo Xu

|June 12, 2009

Summary

This summary is machine-generated.

We developed a new silicon laser using silicon-on-insulator (SOI) technology. This integrated device offers stable, high-purity laser light for scalable silicon photonics applications.

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Area of Science:

Photonics
Materials Science
Integrated Optics

Background:

Silicon photonics is crucial for advanced optical systems.
Developing efficient and scalable silicon-based light sources remains a challenge.

Purpose of the Study:

To demonstrate a monolithic integrated Raman silicon laser.
To achieve stable, single-mode, continuous-wave (CW) lasing in a silicon platform.

Main Methods:

Utilized a silicon-on-insulator (SOI) rib waveguide race-track ring resonator.
Integrated a p-i-n diode structure for laser operation.
Employed reverse biasing for CW lasing.

Main Results:

Achieved stable, single-mode, CW lasing.
Output power exceeded 30mW with 10% slope efficiency.
High spectral purity demonstrated with side mode suppression >70dB and linewidth <100 kHz.

Conclusions:

The developed laser architecture is monolithic and integrated.
Enables on-chip integration with other silicon photonics components.
Offers a scalable solution for future photonic integrated circuits.