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Ordered stacking fault arrays in silicon nanowires.
Francisco J Lopez1, Eric R Hemesath, Lincoln J Lauhon
1Department of Materials Science and Engineering, Northwestern University,Evanston, Illinois 60208, USA.
Nano Letters
|June 17, 2009
Summary
This study reveals that stacking faults in silicon nanowires can be periodic, forming 2H and 9R polytypes instead of the typical 3C structure. This finding resolves previous inconsistencies in silicon nanowire polytype research.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Silicon nanowires (SiNWs) are crucial for nanoelectronic devices.
- Understanding their structural polytypes is essential for device performance.
- Previous studies reported conflicting findings on SiNW polytypes.
Purpose of the Study:
- To investigate the ordering of {111} planar defects in individual silicon nanowires.
- To clarify the formation of different polytypes in SiNWs.
- To resolve inconsistencies in existing literature.
Main Methods:
- Correlated Raman microscopy and transmission electron microscopy (TEM).
- Detailed electron diffraction analysis.
- Polarization-dependent Raman spectroscopy.
Main Results:
- Stacking fault distribution varied from random to periodic in SiNWs.
- Periodic stacking faults led to local domains of 2H and 9R polytypes.
- The 3C diamond cubic structure was not the exclusive polytype.
Conclusions:
- The study resolved controversies regarding polytypes in SiNWs.
- Periodic stacking faults are key to forming non-3C polytypes.
- This work provides a clearer understanding of SiNW structural variations.
