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Photonic crystal lasers in InGaAsP on a SiO(2)/Si substrates and its thermal impedance
Optics Express
|June 18, 2009
Summary
Low-threshold two-dimensional photonic crystal lasers were fabricated on silicon substrates. These InGaAsP lasers operate near 1550 nm with minimal pump power, showing good agreement with simulations.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Photonic crystal lasers offer unique light confinement properties.
- Integration of high-performance lasers on silicon platforms is crucial for photonic integrated circuits.
Purpose of the Study:
- To demonstrate two-dimensional photonic crystal defect lasers in InGaAsP membranes.
- To achieve low-threshold lasing operation near 1550 nm.
- To characterize the thermal properties of the fabricated devices.
Main Methods:
- Fabrication of InGaAsP membranes on SiO(2)/Si substrates using direct bonding.
- Characterization of lasing performance under optical pumping.
- Three-dimensional finite-difference time-domain (FDTD) simulations for device analysis.
- Thermal impedance measurements.
Main Results:
- Successful demonstration of two-dimensional photonic crystal defect lasers.
- Lasing achieved at wavelengths near 1550 nm.
- Low incident threshold pump powers as low as 1.5 mW.
- Experimental results showed good agreement with FDTD simulations.
Conclusions:
- Direct bonding enables efficient integration of InGaAsP photonic crystal lasers on silicon.
- The demonstrated devices exhibit excellent low-threshold performance.
- The characterization provides valuable insights for future photonic device design and thermal management.
