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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...

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Related Experiment Video

Updated: Jun 22, 2026

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

Point defect engineered Si sub-bandgap light-emitting diode.

Jiming Bao, Malek Tabbal, Taegon Kim

    Optics Express
    |June 24, 2009
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed a new method to boost light emission in silicon (Si). This resulted in a sub-bandgap light-emitting diode utilizing point defects to improve radiative recombination for efficient light output.

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    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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    Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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    Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

    Published on: October 23, 2018

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    Last Updated: Jun 22, 2026

    Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
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    Published on: May 31, 2018

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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    Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
    14:16

    Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

    Published on: October 23, 2018

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Silicon (Si) is a primary semiconductor material with limited light-emitting capabilities.
    • Enhancing radiative recombination is crucial for efficient light emission in semiconductors.

    Purpose of the Study:

    • To present a novel approach for enhancing light emission in silicon.
    • To demonstrate a sub-bandgap light-emitting diode (LED) with improved radiative recombination.

    Main Methods:

    • Utilized ion implantation to introduce point defects.
    • Employed pulsed laser melting and rapid thermal annealing for material processing.
    • Created a diode with a self-interstitial-rich, optically active region.

    Main Results:

    • Successfully demonstrated a sub-bandgap light-emitting diode in silicon.
    • Introduced point defects that significantly enhance the radiative recombination rate.
    • Observed a zero-phonon emission line originating from the defect region at 1218 nm.

    Conclusions:

    • The novel approach effectively enhances light emission in silicon.
    • The developed sub-bandgap LED shows promise for optoelectronic applications.
    • Point defect engineering is a viable strategy for improving Si-based light emitters.