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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

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Related Experiment Video

Updated: Jun 22, 2026

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
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Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

Mode-locked silicon evanescent lasers.

Brian R Koch, Alexander W Fang, Oded Cohen

    Optics Express
    |June 24, 2009
    PubMed
    Summary
    This summary is machine-generated.

    Electrically pumped silicon lasers achieve 40 GHz pulse repetition rates. These mode-locked lasers produce 4 ps pulses, ideal for high-speed data transmission and optical networking technologies.

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    Area of Science:

    • Photonics and optoelectronics
    • Integrated silicon photonics
    • Laser technology

    Background:

    • Silicon photonics is crucial for advanced optical communication systems.
    • High-speed, low-jitter lasers are essential for data transmission and clock distribution.
    • Existing silicon laser technologies face limitations in performance and integration.

    Purpose of the Study:

    • To demonstrate electrically pumped lasers integrated on a silicon platform.
    • To achieve high repetition rates and short pulse durations for advanced applications.
    • To explore both passive and hybrid mode-locking techniques for silicon lasers.

    Main Methods:

    • Fabrication of electrically pumped lasers on silicon substrates.
    • Implementation of mode-locking techniques (passive and hybrid).
    • Characterization of laser performance, including repetition rate, pulse width, jitter, and extinction ratio.

    Main Results:

    • Demonstrated electrically pumped silicon lasers with repetition rates up to 40 GHz.
    • Generated ultrashort pulses of 4 picoseconds (ps) with low timing jitter.
    • Achieved extinction ratios exceeding 18 dB, confirming high-quality pulse generation.

    Conclusions:

    • Electrically pumped silicon lasers offer a viable solution for high-speed optical communication.
    • The demonstrated performance is suitable for data and telecommunication transmitters.
    • These lasers pave the way for silicon-based integrated technologies like optical time division multiplexing (OTDM), wavelength division multiplexing (WDM), and optical code division multiple access (OCDMA).