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Updated: Jun 22, 2026
Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Shaped silicon wafers obtained by hot plastic deformation: performance evaluation for future astronomical x-ray
Yuichiro Ezoe1, Takayuki Shirata, Ikuyuki Mitsuishi
1Department of Physics, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji, Tokyo 192-0397, Japan. ezoe@phys.metro-u.ac.jp
Abstract:
In order to develop lightweight and high angular resolution x-ray mirrors, we have investigated hot plastic deformation of 4 in. silicon (111) wafers. A sample wafer was deformed using hemispherical dies with a curvature radius of 1000 mm. The measured radius of the deformed wafer was 1030 mm, suggesting that further conditioning is indispensable for better shaping. For the first time to our knowledge, x-ray reflection on a deformed wafer was detected at Al K(alpha) 1.49 keV. An estimated surface roughness of <1 nm from the x-ray reflection profile was comparable to that of a bare silicon wafer without deformation. Hence, no significant degradation of the microroughness was seen.
