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Updated: Jun 21, 2026

10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Femtosecond pulse generation around 1500 nm using a GaInNAsSb SESAM
N K Metzger1, C G Leburn, A A Lagatsky
1SUPA School of Physics and Astronomy, University of St Andrews, St Andrews, Fife, UK. nkm2@st-and.ac.uk
Optics Express
|July 8, 2009
Abstract:
The operation of a femtosecond Cr(4+):YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230 fs pulses centred at 1528 nm were generated at an average output power of 280 mW. The SESAM exhibited a low saturation fluence of 10 microJ/cm(2) and a short recovery time of 12 ps.

