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Updated: Jun 21, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 cyclooctadiene on Si(001)
Christophe Nacci1, Stefan Fölsch, Karl Zenichowski
1Paul-Drude-Institut für Festkörperelektronik, D-10117 Berlin, Germany.
Abstract:
The biconformational switching of single cyclooctadiene molecules chemisorbed on a Si(001) surface was explored by quantum chemical and quantum dynamical calculations and low-temperature scanning tunneling microscopy experiments. The calculations rationalize the experimentally observed switching driven by inelastic electron tunneling (IET) at 5 K. At higher temperatures, they predict a controllable crossover behavior between IET-driven and thermally activated switching, which is fully confirmed by experiment.
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