Multi-silicon ridge nanofabrication by repeated edge lithography

Area of Science:

• Materials Science and Engineering
• Nanotechnology
• Lithography

Background:

• Nanoimprint lithography (NIL) is a key technique for nanoscale fabrication.
• Efficient and scalable methods for creating high-resolution NIL stamps are crucial.
• Silicon nanostructures offer unique properties for advanced lithographic applications.

Purpose of the Study:

• To present a novel fabrication scheme for multi-silicon (Si) nanoridges.
• To demonstrate the application of these nanoridges as stamps in nanoimprint lithography.
• To achieve precise control over nanoridge dimensions and spacing for NIL.

Main Methods:

• A full-wet etching procedure combined with repeated edge lithography was employed.
• Key steps include hot H(3)PO(4) acid SiN(x) retraction etching, 20% KOH Si etching, 50% HF SiN(x) retraction etching, and LOCal Oxidation of Silicon (LOCOS).
• Utilized Si (110) substrates and KOH etching to achieve smooth vertical sidewalls.

Main Results:

• Successfully fabricated triple Si nanoridges with dimensions of approximately 120 nm height, 40 nm width, and 40 nm spacing.
• Demonstrated the effective use of these fabricated nanoridges as stamps in nanoimprint lithography.
• Achieved wafer-scale fabrication of multi-Si nanoridges using conventional photolithography.

Conclusions:

• The presented fabrication scheme is effective for producing high-quality Si nanoridges suitable for NIL.
• The developed technology enables the large-scale production of precise nanostructures for nanoimprint lithography.
• This method offers a viable route for advanced nano-patterning applications requiring high resolution and uniformity.