Simultaneous formation of two ripple modes on ion sputtered silicon
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Updated: Jun 21, 2026
Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
Published on: August 17, 2017
Adrian Keller1, Steven Roßbach, Stefan Facsko
1Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PO Box 510119, D-01314 Dresden, Germany.
Abstract:
The amorphized surface of Si(100) sputtered with low energy ions at moderate temperature was found to develop two perpendicular ripple patterns overlaying each other. The evolution of these patterns was studied over a wide range of fluence. Coarsening of both ripple modes was observed, showing a similar time dependence with a coarsening exponent of n approximately 0.08. In the high fluence regime, the surface enters a steady state with both ripple modes still present.
