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Spin-related current suppression in a semiconductor quantum dot spin-diode structure.

K Hamaya¹, M Kitabatake, K Shibata

¹Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan. hamaya@ed.kyushu-u.ac.jp

Physical Review Letters

|August 8, 2009

Summary

This summary is machine-generated.

We investigated electron transport in a quantum dot (QD) spin-diode. Anomalous current suppression was observed for two-electron tunneling, potentially due to spin blockade at the quantum dot-ferromagnetic interface.

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Area of Science:

Quantum physics
Condensed matter physics
Spintronics

Background:

Electron transport in semiconductor quantum dots (QDs) is crucial for spintronics.
Spin-dependent transport phenomena require careful control of interfaces, particularly with ferromagnetic materials.

Purpose of the Study:

To experimentally investigate electron transport characteristics in a single quantum dot (QD) spin-diode structure.
To analyze the influence of a ferromagnetic (FM) lead on charge transport and identify mechanisms for current anomalies.

Main Methods:

Fabrication and characterization of a spin-diode device with a single semiconductor quantum dot (QD).
Experimental measurement of electron transport properties, including Coulomb stability diamonds and current-voltage characteristics.
Analysis of tunneling regimes, specifically focusing on two-electron tunneling.

Main Results:

Observed asymmetric Coulomb stability diamond features with respect to bias voltage polarity.
Discovered anomalous suppression of current in the two-electron tunneling regime for both forward and reverse bias.
Identified QD-FM interface as a potential site for spin blockade.

Conclusions:

The observed anomalous current suppression is attributed to spin blockade effects at the quantum dot-ferromagnetic interface.
The artificial atomic nature of the QD and its coupling to FM and nonmagnetic leads significantly influence electron transport.
Understanding these spin-dependent transport features is vital for developing novel spintronic devices.