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Updated: Jun 21, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
Intrinsic coupling between current and domain wall motion in (Ga,Mn)As.
Kjetil Magne Dørheim Hals1, Anh Kiet Nguyen, Arne Brataas
1Department of Physics, Norwegian University of Science and Technology, NO-7491, Trondheim, Norway.
We investigated domain wall motion and induced currents in (Ga,Mn)As. Spin-orbit interaction significantly influences damping and spin-transfer torque, enabling experimental detection of domain wall motion via voltage.
Area of Science:
- Condensed matter physics
- Spintronics
- Materials science
Background:
- Domain wall motion is crucial for spintronic devices.
- Understanding current-induced domain wall dynamics is key for device applications.
- The role of spin-orbit interaction in (Ga,Mn)As requires further investigation.
Purpose of the Study:
- To analyze current-induced domain wall motion and its reciprocal effect in (Ga,Mn)As.
- To express Onsager coefficients using scattering matrices.
- To elucidate the dominant factors governing Gilbert damping and spin-transfer torque.
Main Methods:
- Theoretical analysis using scattering matrices.
- Numerical calculations of Onsager coefficients.
- Investigation of spin-orbit interaction effects.
Main Results:
- Onsager coefficients are determined by scattering matrices.
- Effective Gilbert damping (alphaw) and spin-transfer torque (betaw) in (Ga,Mn)As are dominated by spin-orbit interaction and domain wall scattering.
- Calculated alphaw ≈ 0.01 and betaw ≈ 1 for dirty (Ga,Mn)As.
Conclusions:
- Spin-orbit interaction plays a critical role in domain wall dynamics in (Ga,Mn)As.
- The large betaw parameter facilitates experimental observation of domain wall motion via induced currents or voltages.
- This study provides insights into the fundamental physics of domain wall motion for potential spintronic applications.
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