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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Two-qubit conditional phase gate in laser-excited semiconductor quantum dots using the quantum Zeno effect
1Department of Physics & Astronomy, Michigan State University, East Lansing, Michigan 48824, USA.
Abstract:
We propose a scheme for a two-qubit conditional quantum Zeno phase gate for semiconductor quantum dots. The proposed system consists of two charged dots and one ancillary neutral dot driven by a laser pulse tuned to the exciton resonance. The primary decoherence mechanism is phonon-assisted exciton relaxation, which can be viewed as continuous monitoring by the environment. Because of the Zeno effect, a strong possibility of emission is sufficient to strongly modify the coherent dynamics, with negligible probability of actual emission. We solve analytically the master equation and simulate the dynamics of the system using a realistic set of parameters. In contrast to standard schemes, larger phonon relaxation rates increase the fidelity of the operations.

