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Updated: Jun 21, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Electrical measurement of a two-electron spin state in a double quantum dot
Nobuhiko Yokoshi1, Hiroshi Imamura, Hideo Kosaka
1JST-CREST, Saitama 332-0012, Japan.
Abstract:
We propose a scheme for electrical measurement of two-electron spin states in a semiconductor double quantum dot. We calculated the adiabatic charge transfer when surface gates are modulated in time. Because of spin-orbit coupling in the semiconductor, spatial displacement of the electrons causes a total spin rotation. It follows that the expectation value of the transferred charge reflects the relative phase as well as the total spin population of a prepared singlet-triplet superposition state. The precise detection of the charge transfer serves to identify the quantum superposition.
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