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Updated: Jun 21, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
TEM sample preparation by FIB for carbon nanotube interconnects
Xiaoxing Ke1, Sara Bals, Ainhoa Romo Negreira
1EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium. xiaoxing.ke@ua.ac.be
Abstract:
A powerful method to study carbon nanotubes (CNTs) grown in patterned substrates for potential interconnects applications is transmission electron microscopy (TEM). However, high-quality TEM samples are necessary for such a study. Here, TEM specimen preparation by focused ion beam (FIB) has been used to obtain lamellae of patterned samples containing CNTs grown inside contact holes. A dual-cap Pt protection layer and an extensive 5 kV cleaning procedure are applied in order to preserve the CNTs and avoid deterioration during milling. TEM results show that the inner shell structure of the carbon nanotubes has been preserved, which proves that focused ion beam is a useful technique to prepare TEM samples of CNT interconnects.

