Nanoimprint lithography using vertically aligned carbon nanostructures as stamps

Nanoimprint lithography using vertically aligned carbon nanostructures as stamps is reported. The functionality of the stamp is demonstrated through lift-off and etch-back processes after pattern replication. The imprint process is robust and the stamp structures survived more than 50 consecutive imprints. In this paper we demonstrate this for feature sizes ranging from 80 nm to 200 microm where the aspect ratio of the individual nanostructures surpasses 1:5 with a pitch down to 100 nm. This demonstration opens up the possibility of utilizing vertically grown carbon nanostructures for manufacturing extremely high aspect ratio and small pitch stamps for nanoimprint lithography.