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Study of resonant excitation of infrared surface second harmonic at the GaAs-Al interface
1Institute of Physics, Academia Sinica, Beijing, China.
Optics Letters
|September 1, 2009
Abstract:
By using a tunable TEA CO(2) laser and by grating coupling at the interface of GaAs-Al, we have obtained, for the first time to our knowledge, second-harmonic generation from a resonantly excited infrared surface polariton. The experimental results provided a dispersion relation that compares well with theoretical calculations. The deduced value of chi(2), 5.9 x 10(-7) esu, agrees well with other measurements.
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