Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Evolution of Electronic Properties of Graphene Nanoribbons with Progressive Carving: From Straight to Porous to Chevron Ribbons.

ACS nano·2026

Same author

UHV high temperature surface cleaning and piranha treatment for preserving atomically flat, hydrogen-passivated Si(100) surfaces.

Nanotechnology·2025

Same author

A Functional 2D Carbon Allotrope Combining Nanoporous Graphene and Biphenylene Segments.

Advanced materials (Deerfield Beach, Fla.)·2025

Same author

Conducting Domain Walls in van der Waals Ferroelectric NbOI<sub>2</sub>.

Nano letters·2025

Same author

Ultrafast dynamics of ferroelectric polarization of NbOI<sub>2</sub> captured with femtosecond electron diffraction.

Nature communications·2025

Same author

Topological Solitons in Square-Root Graphene Nanoribbons Controlled by Electric Fields.

Physical review letters·2025

Same journal

Vertically Stacked Indium Gallium Zinc Oxide-Based Three-Dimensional Integrated Circuits.

ACS nano·2026

Same journal

Tunable Nanoparticle Thin-Film Reveals Distance Dependence of Auger-Mediated Radiation Enhancement in Diffuse Midline Glioma.

ACS nano·2026

Same journal

G-Quadruplex Network Engineering in Ionogels: Realizing Robust Biosensing Interfaces for Plant Electrophysiology.

ACS nano·2026

Same journal

Announcing the 2026 <i>ACS Nano</i> Lectureship and <i>ACS Nano</i> Impact Award Laureates.

ACS nano·2026

Same journal

Ultrafast Self-Assembly of Zeolitic Imidazolate Framework-8 Enables Antibody Orientation for Ultrasensitive Lateral Flow Immunoassays.

ACS nano·2026

Same journal

Interfacial Salt Engineering with Alkali and Ammonium Additives for Stable Pure-Blue Perovskite Light-Emitting Diodes and Micropatterned Displays.

ACS nano·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Jun 20, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

Lithographic graphitic memories.

Alexander Sinitskii¹, James M Tour

¹Department of Chemistry, Rice University, Houston, TX 77005, USA.

|September 2, 2009

Summary

This summary is machine-generated.

Researchers developed novel graphitic stripe memory devices using chemical vapor deposition. These stable, rewritable, and nonvolatile memories offer high performance and scalability for future electronic applications.

More Related Videos

Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material

Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material

Published on: February 5, 2019

Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy

Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy

Published on: July 15, 2019

Related Experiment Videos

Last Updated: Jun 20, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material

Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material

Published on: February 5, 2019

Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy

Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy

Published on: July 15, 2019

Area of Science:

Materials Science
Nanotechnology
Electrical Engineering

Background:

Development of advanced memory devices is crucial for next-generation electronics.
Existing memory technologies face challenges in scalability and performance.

Purpose of the Study:

To report easily accessible memory devices based on graphitic material stripes.
To demonstrate the voltage-induced switching behavior for two-terminal memory applications.

Main Methods:

Fabrication of graphitic stripes using chemical vapor deposition (CVD) and lithography.
Characterization of memory device performance, including switching behavior, stability, and scalability.

Main Results:

Graphitic stripe devices exhibit stable, rewritable, and nonvolatile memory characteristics.
Achieved high ON/OFF ratios (up to 10^7), fast switching times (down to 1 μs), and low switching voltages (3-4 V).
Demonstrated scalability of memory parameters with device dimensions.

Conclusions:

Easily fabricated graphitic stripe devices show significant promise for high-performance memory applications.
The scalability and robust performance suggest potential for large-scale parallel manufacturing.