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Updated: Jun 20, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

12.5-W continuous-wave monolithic laser-diode arrays.

M Sakamoto, G L Harnagel, D F Welch

    Optics Letters
    |September 12, 2009
    PubMed
    Summary
    This summary is machine-generated.

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    This study demonstrates a 1-cm monolithic aluminum gallium arsenide (AlGaAs) laser array achieving 12.5 W continuous-wave output power. The laser array also achieved high power-conversion efficiencies of up to 42%.

    Area of Science:

    • Semiconductor Lasers
    • Optoelectronics
    • Materials Science

    Background:

    • High-power semiconductor lasers are crucial for various applications.
    • Aluminum Gallium Arsenide (AlGaAs) is a key material for optoelectronic devices.

    Purpose of the Study:

    • To develop and characterize a high-power monolithic AlGaAs laser array.
    • To achieve significant continuous-wave output power and high power-conversion efficiency.

    Main Methods:

    • Fabrication of a 1-cm monolithic laser array.
    • Utilizing twenty 10-stripe laser diodes within the array.
    • Characterization of continuous-wave output power and power-conversion efficiency.

    Main Results:

    • Achieved 12.5 W continuous-wave output power from one facet.

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    Last Updated: Jun 20, 2026

    Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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    Published on: April 24, 2014

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  • Reached power-conversion efficiencies as high as 42%.

    • Conclusions:

    • The monolithic AlGaAs laser array demonstrates excellent performance for high-power applications.
    • The results highlight the potential of integrated semiconductor laser technology.