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Wavelength optimization and power dependence of optically controlled modulation in InGaAsP/InP
Optics Letters
|September 12, 2009
Summary
We explored optical transmission modulation in InGaAsP, achieving 42% modulation depth at 1280 nm with 5-mW control power. This dynamic band filling effect shows potential for optoelectronic devices.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Physics
Background:
- Dynamic band filling is a key mechanism in semiconductor optoelectronics.
- Indium Gallium Arsenide Phosphide (InGaAsP) is a crucial material for optical communication.
- Understanding modulation characteristics is vital for device performance.
Purpose of the Study:
- To investigate the wavelength and power dependence of optically controlled transmission modulation.
- To analyze dynamic band filling effects in InGaAsP.
- To determine optimal conditions for high modulation depth.
Main Methods:
- Experimental measurements of transmission modulation in InGaAsP.
- Varying control power and wavelength to observe modulation depth.
- Theoretical modeling using carrier rate equations and band transition analysis.
Main Results:
- Maximum modulation depth of 42% achieved at 1280 nm.
- Optimal control power identified as 5 mW.
- Modulation depth showed a slight decrease with increasing test power.
Conclusions:
- Dynamic band filling in InGaAsP enables effective optically controlled transmission modulation.
- Experimental results are well-described by theoretical analysis.
- The findings provide insights for designing high-performance optoelectronic modulators.
